Mark W. Horn

Associate Professor of Engineering Science and Mechanics
212 Earth & Engineering Sciences
The Pennsylvania State University
University Park, PA 16802-6300
USA

mhorn@engr.psu.edu
+1 (814) 865-0332
+1 (814) 865-9974

Professional Experience

1988 - 1998 Member of Technical Staff, Submicron Technology Group, MIT Lincoln Laboratory
1998 - 2001 Associate Director for Processing and Instruction, The Pennsylvania State University Nanofabrication Facility
2001- Associate Professor, Educational and Research interests include fabrication of silicon and non-silicon MEMs, chemical and biological sensors, advancement of nanolithography, fabrication and high-frequency characterization of ferroelectric thin films and deposition and characterization of sculptured thin films.

Research

Photoresist, lithography, planarization, etching and process characterization.

Education
Investigator for NSF Regional Center for Manufacturing Education in Nanotechnology (2001-2004).
Investigator for: Commonwealth of Pennsylvania Support for Semiconductor Manufacturing Initiative/Nanofabrication Technology Initiative (1999-2001)
Developed and taught for Nanofabrication Manufacturing Technology Program
E Sc 211 MATERIAL, SAFETY, AND EQUIPMENT OVERVIEW FOR NANOFABRICATION
E Sc 212 BASIC NANOFABRICATION PROCESSESE
E Sc 213 THIN FILMS IN NANOFABRICATIONE
E Sc 214 LITHOGRAPHY FOR NANOFABRICATIONE
E Sc 215 MATERIALS MODIFICATION IN NANOFABRICATIONE
E Sc 216 CHARACTERIZATION, PACKAGING, AND TESTING OF NANOFABRICATED STRUCTURES

Selected Publications

A Comparison of Etching Tools for Resist Pattern Transfer, M. W. Horn, M. A. Hartney, and R. R. Kunz, Proc. SPIE Vol 1672 Advances in Resist Technology and Processing IX 488 (1992).

All-Dry Resist Processes for 193-nm Lithography, M. W. Horn, B. E. Maxwell, R. R. Kunz, M. S. Hibbs, L. M. Eriksen, S. C. Palmateer, and A.R. Forte, SPIE Proc. 2438, 760 (1995).

Profile Control in Dry Development of High-aspect-ratio Resist Structures, M. B. Stern, S. C. Palmateer, M. W. Horn, M. Rothschild, B. E. Maxwell, and J. E. Curtin, J. Vac. Sci. Technol. B. 13(6), 3017 (1995).

Plasma-deposited silylation resist for 193-nm lithography, M. W. Horn, M. Rothschild, B. E. Maxwell, R. B. Goodman, and L. M. Eriksen., Appl. Phys. Lett. 68(2), 179 (1996).

Lithography with 157 nm lasers, T. M. Bloomstein, M. W. Horn, M. Rothschild, R.R. Kunz, S. T. Palmacci, and R. B. Goodman, J. Vac. Sci. Technol. B 15(6), 2112 (1997).

7 February 2002
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